The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
La croissance épitaxiale par faisceau moléculaire excitée par plasma de résonance électronique-cyclotron (ECR-MBE) de GaN à l'aide d'un plasma gazeux mixte hydrogène-azote a été étudiée. Le taux de croissance du GaN a été considérablement augmenté par l’ajout d’hydrogène au plasma d’azote. La transition des diagrammes de réflexion de diffraction électronique à haute énergie (RHEED), de motifs striés créés sans présence d'hydrogène à des motifs tachetés en présence d'hydrogène, a indiqué que le rapport V/III effectif était augmenté par l'ajout d'hydrogène. NHx des familles de radicaux ont été détectées dans un plasma gazeux mixte hydrogène-azote par spectroscopie de masse quadripolaire et spectroscopie d'émission optique. Ces radicaux ont été considérés comme responsables de l’augmentation observée du taux de croissance. L'observation au microscope électronique à transmission a montré que la morphologie de surface du GaN sans hydrogène était relativement plate et que celle avec l'hydrogène était en forme de colonne avec des facettes {1 0 ~ 1 1}. Il semble probable que la structure en colonnes des couches de GaN cultivées avec de l’hydrogène soit fortement liée à la croissance initiale des îles.
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Yasuo CHIBA, Tsutomu ARAKI, Yasushi NANISHI, "ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 627-632, April 2000, doi: .
Abstract: Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NHx radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_627/_p
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@ARTICLE{e83-c_4_627,
author={Yasuo CHIBA, Tsutomu ARAKI, Yasushi NANISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma},
year={2000},
volume={E83-C},
number={4},
pages={627-632},
abstract={Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NHx radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.},
keywords={},
doi={},
ISSN={},
month={April},}
Copier
TY - JOUR
TI - ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma
T2 - IEICE TRANSACTIONS on Electronics
SP - 627
EP - 632
AU - Yasuo CHIBA
AU - Tsutomu ARAKI
AU - Yasushi NANISHI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NHx radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.
ER -