The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Des études ont été menées sur des structures AlGaN/GaN/saphir soumises à des dépôts organométalliques-chimiques en phase vapeur (MOCVD) en utilisant la diffratométrie des rayons X. Alors que l'AlGaN avec une fraction molaire d'AlN inférieure (<0.1) est soumis à une contrainte de compression dans le plan, il est soumis à une contrainte de traction dans le plan avec une fraction molaire d'AlN élevée (>0.1). Bien que les contraintes de traction aient provoqué des fissures dans la couche d'AlGaN avec une fraction molaire d'AlN élevée, nous avons constaté que les fissures étaient considérablement réduites lorsque la qualité de la couche de GaN n'était pas bonne. En utilisant cette technique, nous avons fabriqué des diodes électroluminescentes à puits quantiques multiples GaInN (MQW) sur 15 paires de structures de réflecteurs de Bragg distribués (DBR) AlGaN/GaN. La réflectivité de 15 paires de structure AlGaN/GaN DBR a été démontrée à 75 % à 435 nm. Une puissance de sortie considérablement plus élevée (1.5 fois) a été observée pour les LED GaInN MQW basées sur DBR par rapport aux structures MQW non basées sur DBR.
Hiroyasu ISHIKAWA
Naoyuki NAKADA
Masaharu NAKAJI
Guang-Yuan ZHAO
Takashi EGAWA
Takashi JIMBO
Masayoshi UMENO
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Hiroyasu ISHIKAWA, Naoyuki NAKADA, Masaharu NAKAJI, Guang-Yuan ZHAO, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO, "Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 591-597, April 2000, doi: .
Abstract: Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower AlN molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_591/_p
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@ARTICLE{e83-c_4_591,
author={Hiroyasu ISHIKAWA, Naoyuki NAKADA, Masaharu NAKAJI, Guang-Yuan ZHAO, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors},
year={2000},
volume={E83-C},
number={4},
pages={591-597},
abstract={Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower AlN molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures.},
keywords={},
doi={},
ISSN={},
month={April},}
Copier
TY - JOUR
TI - Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors
T2 - IEICE TRANSACTIONS on Electronics
SP - 591
EP - 597
AU - Hiroyasu ISHIKAWA
AU - Naoyuki NAKADA
AU - Masaharu NAKAJI
AU - Guang-Yuan ZHAO
AU - Takashi EGAWA
AU - Takashi JIMBO
AU - Masayoshi UMENO
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower AlN molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures.
ER -