The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nos progrès récents dans les nanostructures à base de GaN pour les lasers à points quantiques (QD) et les lasers à émission de surface à microcavité verticale (VCSEL) sont discutés. Nous avons développé des QD InGaN auto-assemblés sur une couche épitaxiale de GaN, en utilisant un dépôt chimique en phase vapeur organométallique à pression atmosphérique. Le diamètre moyen des QD était aussi petit que 8.4 nm et une forte émission de photoluminescence provenant des QD a été observée à température ambiante. De plus, nous avons constaté que les QD InGaN pouvaient être formés même après l’empilement de 10 couches QD, augmentant ainsi la densité totale des QD. En utilisant ces résultats de croissance, nous avons fabriqué une structure laser avec des QD InGaN intégrés dans la couche active. Un seuil clair a été observé dans la dépendance de l'intensité d'émission sur l'énergie d'excitation à température ambiante sous excitation optique. Nous avons réussi à démontrer l'action laser dans des lasers à émission de surface à cavité verticale à température ambiante avec une finesse de cavité supérieure à 200.
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Yasuhiko ARAKAWA, Takao SOMEYA, Koichi TACHIBANA, "Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 564-572, April 2000, doi: .
Abstract: Our recent progress in GaN-based nanostructures for quantum dot (QD) lasers and vertical microcavity surface emitting lasers (VCSELs) is discussed. We have grown InGaN self-assembled QDs on a GaN epitaxial layer, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter of the QDs was as small as 8.4 nm and strong photoluminescence emission from the QDs was observed at room temperature. Furthermore, we found that InGaN QDs could be formed even after 10 QD layers were stacked, thus increasing the total QD density. Using these growth results, we fabricated a laser structure with InGaN QDs embedded in the active layer. A clear threshold was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. We succeeded in demonstrating in lasing action in vertical cavity surface emitting lasers at room temperature with a cavity finesse of over 200.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_564/_p
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@ARTICLE{e83-c_4_564,
author={Yasuhiko ARAKAWA, Takao SOMEYA, Koichi TACHIBANA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers},
year={2000},
volume={E83-C},
number={4},
pages={564-572},
abstract={Our recent progress in GaN-based nanostructures for quantum dot (QD) lasers and vertical microcavity surface emitting lasers (VCSELs) is discussed. We have grown InGaN self-assembled QDs on a GaN epitaxial layer, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter of the QDs was as small as 8.4 nm and strong photoluminescence emission from the QDs was observed at room temperature. Furthermore, we found that InGaN QDs could be formed even after 10 QD layers were stacked, thus increasing the total QD density. Using these growth results, we fabricated a laser structure with InGaN QDs embedded in the active layer. A clear threshold was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. We succeeded in demonstrating in lasing action in vertical cavity surface emitting lasers at room temperature with a cavity finesse of over 200.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers
T2 - IEICE TRANSACTIONS on Electronics
SP - 564
EP - 572
AU - Yasuhiko ARAKAWA
AU - Takao SOMEYA
AU - Koichi TACHIBANA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Our recent progress in GaN-based nanostructures for quantum dot (QD) lasers and vertical microcavity surface emitting lasers (VCSELs) is discussed. We have grown InGaN self-assembled QDs on a GaN epitaxial layer, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter of the QDs was as small as 8.4 nm and strong photoluminescence emission from the QDs was observed at room temperature. Furthermore, we found that InGaN QDs could be formed even after 10 QD layers were stacked, thus increasing the total QD density. Using these growth results, we fabricated a laser structure with InGaN QDs embedded in the active layer. A clear threshold was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. We succeeded in demonstrating in lasing action in vertical cavity surface emitting lasers at room temperature with a cavity finesse of over 200.
ER -