The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Des diodes électroluminescentes (DEL) à structure à puits quantique unique InGaN et GaN UV/bleu/vert ont été cultivées sur des substrats de GaN (ELOG) et de saphir épitaxiés latéralement. L'efficacité quantique externe (EQE) de la LED UV InGaN sur ELOG était bien supérieure à celle du saphir uniquement en fonctionnement à courant élevé. En fonctionnement à faible courant, les deux LED avaient le même EQE. Lorsque la couche active était du GaN, l'EQE de la LED sur le saphir était bien inférieur à celui de l'ELOG, même lors d'opérations à faible et à fort courant, en raison de l'absence d'états d'énergie localisés formés par les fluctuations de la composition de l'alliage. Afin d'améliorer la durée de vie de la diode laser (LD), ELOG a dû être utilisé car la densité de courant de fonctionnement de la LD est bien supérieure à celle de la LED. Une LD violette à hétérostructure à confinement séparé InGaN multi-puits quantiques/GaN/AlGaN a été cultivée sur ELOG sur saphir. Les LD avec des facettes de miroir clivées ont montré une puissance de sortie pouvant atteindre 40 mW dans des conditions de fonctionnement en onde continue (CW) à température ambiante. Le mode transverse fondamental stable a été observé à une puissance de sortie allant jusqu'à 40 mW. La durée de vie estimée des LD à une puissance de sortie constante de 10 mW était de plus de 2,000 60 heures en fonctionnement CW à une température ambiante de XNUMX °C.
InGaN, DEL, diode laser, ÉLOG, saphir
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Shuji NAKAMURA, "UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 529-535, April 2000, doi: .
Abstract: UV/blue/green InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The external quantum efficiency (EQE) of the UV InGaN LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even at low- and high-current operations due to the lack of localized energy states formed by alloy composition fluctuations. In order to improve the lifetime of laser diode (LD), ELOG had to be used because the operating current density of the LD is much higher than that of LED. A violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_529/_p
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@ARTICLE{e83-c_4_529,
author={Shuji NAKAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN},
year={2000},
volume={E83-C},
number={4},
pages={529-535},
abstract={UV/blue/green InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The external quantum efficiency (EQE) of the UV InGaN LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even at low- and high-current operations due to the lack of localized energy states formed by alloy composition fluctuations. In order to improve the lifetime of laser diode (LD), ELOG had to be used because the operating current density of the LD is much higher than that of LED. A violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60
keywords={},
doi={},
ISSN={},
month={April},}
Copier
TY - JOUR
TI - UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN
T2 - IEICE TRANSACTIONS on Electronics
SP - 529
EP - 535
AU - Shuji NAKAMURA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - UV/blue/green InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The external quantum efficiency (EQE) of the UV InGaN LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even at low- and high-current operations due to the lack of localized energy states formed by alloy composition fluctuations. In order to improve the lifetime of laser diode (LD), ELOG had to be used because the operating current density of the LD is much higher than that of LED. A violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60
ER -