The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Les photodiodes à guide d'ondes (WGPD) sont des dispositifs clés pour les récepteurs optiques à grande vitesse dans les lignes principales en raison de leur capacité potentielle à fournir à la fois un rendement élevé et une réponse à grande vitesse. Nous avons conçu une photodiode à guide d'ondes pour les récepteurs optiques de gamme 40 Gb/s. Les caractéristiques de couplage optique ont été simulées en détail pour optimiser la structure du guide d'onde, et les électrodes de la photodiode ont été conçues pour former une ligne de transmission coplanaire adaptée à l'impédance du système, ce qui a minimisé la dégradation de la réponse en fréquence. Une couche de contact InGaAs hautement dopée au béryllium et cultivée à basse température par épitaxie par jet moléculaire à source de gaz a été utilisée pour réduire la résistance en série, et une réduction d'environ 40 % de la résistance en série a été obtenue. Le dispositif fabriqué présentait à la fois une efficacité quantique externe très élevée de 81 % pour une lumière de 1.55 µm et une bande passante suffisante de plus de 40 GHz. Bien que nous ayons utilisé un processus de fabrication conventionnel simple, d'excellentes caractéristiques ont été obtenues grâce à la conception optique optimisée et aux paramètres parasites bien supprimés.
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Takeshi TAKEUCHI, Takeshi NAKATA, Kiyoshi FUKUCHI, Kikuo MAKITA, Kenko TAGUCHI, "A High-Efficiency Waveguide Photodiode for 40-Gb/s Optical Receivers" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 8, pp. 1502-1508, August 1999, doi: .
Abstract: Waveguide photodiodes (WGPDs) are key devices for high-speed optical receivers in trunk lines because of their potential ability to provide both high efficiency and a high-speed response. We have designed a waveguide photodiode for 40-Gb/s-range optical receivers. The optical coupling characteristics were simulated in detail to optimize the waveguide structure, and the electrodes of the photodiode were designed to form a coplanar transmission line to match the system impedance, which minimized frequency-response degradation. A highly beryllium-doped, low-temperature-grown InGaAs contact layer grown by gas source molecular beam epitaxy was used to reduce the series resistance, and approximately 40% reduction of series resistance was achieved. The fabricated device exhibited both a very high external quantum efficiency of 81% for 1.55-µm light and a sufficient bandwidth of more than 40 GHz. Though we used a simple conventional fabrication process, excellent characteristics were achieved due to the optimized optical design and well suppressed parasitic parameters.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_8_1502/_p
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@ARTICLE{e82-c_8_1502,
author={Takeshi TAKEUCHI, Takeshi NAKATA, Kiyoshi FUKUCHI, Kikuo MAKITA, Kenko TAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A High-Efficiency Waveguide Photodiode for 40-Gb/s Optical Receivers},
year={1999},
volume={E82-C},
number={8},
pages={1502-1508},
abstract={Waveguide photodiodes (WGPDs) are key devices for high-speed optical receivers in trunk lines because of their potential ability to provide both high efficiency and a high-speed response. We have designed a waveguide photodiode for 40-Gb/s-range optical receivers. The optical coupling characteristics were simulated in detail to optimize the waveguide structure, and the electrodes of the photodiode were designed to form a coplanar transmission line to match the system impedance, which minimized frequency-response degradation. A highly beryllium-doped, low-temperature-grown InGaAs contact layer grown by gas source molecular beam epitaxy was used to reduce the series resistance, and approximately 40% reduction of series resistance was achieved. The fabricated device exhibited both a very high external quantum efficiency of 81% for 1.55-µm light and a sufficient bandwidth of more than 40 GHz. Though we used a simple conventional fabrication process, excellent characteristics were achieved due to the optimized optical design and well suppressed parasitic parameters.},
keywords={},
doi={},
ISSN={},
month={August},}
Copier
TY - JOUR
TI - A High-Efficiency Waveguide Photodiode for 40-Gb/s Optical Receivers
T2 - IEICE TRANSACTIONS on Electronics
SP - 1502
EP - 1508
AU - Takeshi TAKEUCHI
AU - Takeshi NAKATA
AU - Kiyoshi FUKUCHI
AU - Kikuo MAKITA
AU - Kenko TAGUCHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1999
AB - Waveguide photodiodes (WGPDs) are key devices for high-speed optical receivers in trunk lines because of their potential ability to provide both high efficiency and a high-speed response. We have designed a waveguide photodiode for 40-Gb/s-range optical receivers. The optical coupling characteristics were simulated in detail to optimize the waveguide structure, and the electrodes of the photodiode were designed to form a coplanar transmission line to match the system impedance, which minimized frequency-response degradation. A highly beryllium-doped, low-temperature-grown InGaAs contact layer grown by gas source molecular beam epitaxy was used to reduce the series resistance, and approximately 40% reduction of series resistance was achieved. The fabricated device exhibited both a very high external quantum efficiency of 81% for 1.55-µm light and a sufficient bandwidth of more than 40 GHz. Though we used a simple conventional fabrication process, excellent characteristics were achieved due to the optimized optical design and well suppressed parasitic parameters.
ER -