The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
La simulation des équipements peut apporter une aide précieuse à la conception des réacteurs et à l’optimisation des procédés. Cet article décrit les modèles physiques et chimiques utilisés dans cette technique et passe en revue l’état actuel de l’art des outils logiciels disponibles. De plus, le potentiel de la simulation d’équipement sera mis en évidence au moyen de trois exemples récents issus du développement avancé de procédés de silicium quart de micron. Il s'agit notamment d'un réacteur discontinu vertical pour le LPCVD d'oxyde de silicium dopé à l'arsenic, d'un réacteur CVD au tungstène multi-stations et d'un réacteur à plasma pour la gravure du silicium.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copier
Christoph WERNER, "Equipment Simulation of Production Reactors for Silicon Device Fabrication" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 992-996, June 1999, doi: .
Abstract: Equipment simulation can provide valuable support in reactor design and process optimization. This article describes the physical and chemical models used in this technique and the current state of the art of the available software tools is reviewed. Moreover, the potential of equipment simulation will be highlighted by means of three recent examples from advanced quarter micron silicon process development. These include a vertical batch reactor for LPCVD of arsenic doped silicon oxide, a multi station tungsten CVD reactor, and a plasma reactor for silicon etching.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_992/_p
Copier
@ARTICLE{e82-c_6_992,
author={Christoph WERNER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Equipment Simulation of Production Reactors for Silicon Device Fabrication},
year={1999},
volume={E82-C},
number={6},
pages={992-996},
abstract={Equipment simulation can provide valuable support in reactor design and process optimization. This article describes the physical and chemical models used in this technique and the current state of the art of the available software tools is reviewed. Moreover, the potential of equipment simulation will be highlighted by means of three recent examples from advanced quarter micron silicon process development. These include a vertical batch reactor for LPCVD of arsenic doped silicon oxide, a multi station tungsten CVD reactor, and a plasma reactor for silicon etching.},
keywords={},
doi={},
ISSN={},
month={June},}
Copier
TY - JOUR
TI - Equipment Simulation of Production Reactors for Silicon Device Fabrication
T2 - IEICE TRANSACTIONS on Electronics
SP - 992
EP - 996
AU - Christoph WERNER
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - Equipment simulation can provide valuable support in reactor design and process optimization. This article describes the physical and chemical models used in this technique and the current state of the art of the available software tools is reviewed. Moreover, the potential of equipment simulation will be highlighted by means of three recent examples from advanced quarter micron silicon process development. These include a vertical batch reactor for LPCVD of arsenic doped silicon oxide, a multi station tungsten CVD reactor, and a plasma reactor for silicon etching.
ER -