The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Les caractéristiques électrothermiques du MOSFET Si en état transitoire sont rapportées à l'aide d'un simulateur de dispositif non isotherme où l'auto-échauffement du transistor et l'influence thermique de ses dispositifs voisins sont dûment pris en compte. L'influence thermique est estimée à l'aide d'un simulateur thermique tridimensionnel. Sur la base de cette configuration, nous prédisons les caractéristiques électrothermiques dépendant du temps du MOSFET Si lors de la commutation de grille et ses conditions de claquage de drain. Nous montrons que le délai entre la réponse électrique et l’augmentation de la température du réseau est significatif et ne peut donc pas être négligé. De plus, nous avons constaté que les caractéristiques d’avalanche et de claquage thermique dépendent largement de la pente de la tension d’entrée du drain.
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Hirobumi KAWASHIMA, Ryo DANG (or DAN), "Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 894-899, June 1999, doi: .
Abstract: Electro-thermal characteristics of the Si MOSFET in transient state are reported using a non-isothermal device simulator where both the transistor's self-heating and the thermal influence of its neighboring devices are duly taken into account. The thermal influence is estimated using a three-dimensional thermal simulator. Based on this set-up, we predict time-dependent electro-thermal characteristics of the Si MOSFET at gate switching and its drain breakdown conditions. We show that the time delay between the electrical response and the lattice temperature rise, is significant and thus can not be neglected. In addition, we found that avalanche and thermal breakdown characteristics largely depend on the slope of the drain input voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_894/_p
Copier
@ARTICLE{e82-c_6_894,
author={Hirobumi KAWASHIMA, Ryo DANG (or DAN), },
journal={IEICE TRANSACTIONS on Electronics},
title={Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State},
year={1999},
volume={E82-C},
number={6},
pages={894-899},
abstract={Electro-thermal characteristics of the Si MOSFET in transient state are reported using a non-isothermal device simulator where both the transistor's self-heating and the thermal influence of its neighboring devices are duly taken into account. The thermal influence is estimated using a three-dimensional thermal simulator. Based on this set-up, we predict time-dependent electro-thermal characteristics of the Si MOSFET at gate switching and its drain breakdown conditions. We show that the time delay between the electrical response and the lattice temperature rise, is significant and thus can not be neglected. In addition, we found that avalanche and thermal breakdown characteristics largely depend on the slope of the drain input voltage.},
keywords={},
doi={},
ISSN={},
month={June},}
Copier
TY - JOUR
TI - Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State
T2 - IEICE TRANSACTIONS on Electronics
SP - 894
EP - 899
AU - Hirobumi KAWASHIMA
AU - Ryo DANG (or DAN)
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - Electro-thermal characteristics of the Si MOSFET in transient state are reported using a non-isothermal device simulator where both the transistor's self-heating and the thermal influence of its neighboring devices are duly taken into account. The thermal influence is estimated using a three-dimensional thermal simulator. Based on this set-up, we predict time-dependent electro-thermal characteristics of the Si MOSFET at gate switching and its drain breakdown conditions. We show that the time delay between the electrical response and the lattice temperature rise, is significant and thus can not be neglected. In addition, we found that avalanche and thermal breakdown characteristics largely depend on the slope of the drain input voltage.
ER -