The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous proposons une nouvelle méthode de modélisation inverse pour extraire le profil de dopant de canal 2D dans un MOSFET. Le profil est extrait de la tension de seuil (Vth) des MOSFET avec une série de longueurs de grille. Le caractère unique du profil de canal et de drain extrait est confirmé par des simulations de tests. Le profil extrait des nMOSFET réels de 0.1 µm explique les effets de canal court inverse (RSCE) de la tension de seuil en fonction de la longueur de la grille, y compris la dépendance de la polarisation du substrat.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copier
Hirokazu HAYASHI, Hideaki MATSUHASHI, Koichi FUKUDA, Kenji NISHI, "Inverse Modeling and Its Application to MOSFET Channel Profile Extraction" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 862-869, June 1999, doi: .
Abstract: We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed through test simulations. The extracted profile of actual 0.1 µm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_862/_p
Copier
@ARTICLE{e82-c_6_862,
author={Hirokazu HAYASHI, Hideaki MATSUHASHI, Koichi FUKUDA, Kenji NISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Inverse Modeling and Its Application to MOSFET Channel Profile Extraction},
year={1999},
volume={E82-C},
number={6},
pages={862-869},
abstract={We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed through test simulations. The extracted profile of actual 0.1 µm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.},
keywords={},
doi={},
ISSN={},
month={June},}
Copier
TY - JOUR
TI - Inverse Modeling and Its Application to MOSFET Channel Profile Extraction
T2 - IEICE TRANSACTIONS on Electronics
SP - 862
EP - 869
AU - Hirokazu HAYASHI
AU - Hideaki MATSUHASHI
AU - Koichi FUKUDA
AU - Kenji NISHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed through test simulations. The extracted profile of actual 0.1 µm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.
ER -