The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Ces dernières années ont vu de grands progrès dans notre compréhension et notre modélisation de la diffusion couplée de dopants et de défauts dans le silicium au cours des processus de fabrication de circuits intégrés. Cependant, la diminution constante des dimensions et des tolérances des appareils entraîne de nouveaux problèmes et nécessite des modèles encore meilleurs. Dans cette revue, nous abordons certaines des avancées dans la compréhension de la diffusion médiée par des défauts, en nous concentrant sur les équations et les paramètres appropriés pour la modélisation de la diffusion des dopants dans les structures submicroniques.
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Scott T. DUNHAM, Alp H. GENCER, Srinivasan CHAKRAVARTHI, "Modeling of Dopant Diffusion in Silicon" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 800-812, June 1999, doi: .
Abstract: Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_800/_p
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@ARTICLE{e82-c_6_800,
author={Scott T. DUNHAM, Alp H. GENCER, Srinivasan CHAKRAVARTHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modeling of Dopant Diffusion in Silicon},
year={1999},
volume={E82-C},
number={6},
pages={800-812},
abstract={Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.},
keywords={},
doi={},
ISSN={},
month={June},}
Copier
TY - JOUR
TI - Modeling of Dopant Diffusion in Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 800
EP - 812
AU - Scott T. DUNHAM
AU - Alp H. GENCER
AU - Srinivasan CHAKRAVARTHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.
ER -