The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article propose une nouvelle méthode d'analyse de distorsion pour les amplificateurs FET dépendants de la fréquence, qui utilise un nouveau modèle de série de puissance complexe dépendant de la fréquence (FDCPS). Ce modèle se compose d'un amplificateur non linéaire indépendant de la fréquence représenté par une série de puissances complexes d'ordre impair et de filtres d'entrée et de sortie dépendants de la fréquence. Les caractéristiques de fréquence dans la bande de la région de saturation sont représentées par le filtre de sortie dépendant de la fréquence, tandis que les caractéristiques de fréquence dans la bande de la région linéaire sont représentées par les filtres d'entrée et de sortie dépendant de la fréquence. Dans ce procédé, l'analyse dans le domaine temporel est effectuée pour calculer les caractéristiques de l'amplificateur non linéaire indépendant de la fréquence, et l'analyse dans le domaine fréquentiel est appliquée pour calculer les caractéristiques des filtres d'entrée et de sortie dépendant de la fréquence. L'intermodulation du troisième ordre (IM3) calculée par cette méthode pour un amplificateur MESFET GaAs est en bon accord avec les résultats numériques obtenus par la méthode Harmonic Balance (HB). De plus, l'IM3 calculé par cette méthode concorde également bien avec les données mesurées pour un amplificateur MESFET GaAs à 3 étages en bande L. Il est démontré que cette méthode est efficace pour calculer la distorsion dépendant de la fréquence d'un amplificateur non linéaire avec des signaux de modulation à large bande.
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Kenichi HORIGUCHI, Kazuhisa YAMAUCHI, Kazutomi MORI, Masatoshi NAKAYAMA, Yukio IKEDA, Tadashi TAKAGI, "A Distortion Analysis Method for FET Amplifiers Using Novel Frequency-Dependent Complex Power Series Model" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 5, pp. 737-743, May 1999, doi: .
Abstract: This paper proposes a new distortion analysis method for frequency-dependent FET amplifiers, which uses a novel Frequency-Dependent Complex Power Series (FDCPS) model. This model consists of a frequency-independent nonlinear amplifier represented by an odd-order complex power series and frequency-dependent input and output filters. The in-band frequency characteristics of the saturation region are represented by the frequency-dependent output filter, while the in-band frequency characteristics of the linear region are represented by the frequency-dependent input and output filters. In this method, the time-domain analysis is carried out to calculate the frequency-independent nonlinear amplifier characteristics, and the frequency-domain analysis is applied to calculate the frequency-dependent input and output filter characteristics. The third-order intermodulation (IM3) calculated by this method for a GaAs MESFET amplifier is in good agreement with the numerical results obtained by the Harmonic Balance (HB) method. Moreover, the IM3 calculated by this method also agrees well with the measured data for an L-band 3-stage GaAs MESFET amplifier. It is shown that this method is effective for calculating frequency-dependent distortion of a nonlinear amplifier with broadband modulation signals.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_5_737/_p
Copier
@ARTICLE{e82-c_5_737,
author={Kenichi HORIGUCHI, Kazuhisa YAMAUCHI, Kazutomi MORI, Masatoshi NAKAYAMA, Yukio IKEDA, Tadashi TAKAGI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Distortion Analysis Method for FET Amplifiers Using Novel Frequency-Dependent Complex Power Series Model},
year={1999},
volume={E82-C},
number={5},
pages={737-743},
abstract={This paper proposes a new distortion analysis method for frequency-dependent FET amplifiers, which uses a novel Frequency-Dependent Complex Power Series (FDCPS) model. This model consists of a frequency-independent nonlinear amplifier represented by an odd-order complex power series and frequency-dependent input and output filters. The in-band frequency characteristics of the saturation region are represented by the frequency-dependent output filter, while the in-band frequency characteristics of the linear region are represented by the frequency-dependent input and output filters. In this method, the time-domain analysis is carried out to calculate the frequency-independent nonlinear amplifier characteristics, and the frequency-domain analysis is applied to calculate the frequency-dependent input and output filter characteristics. The third-order intermodulation (IM3) calculated by this method for a GaAs MESFET amplifier is in good agreement with the numerical results obtained by the Harmonic Balance (HB) method. Moreover, the IM3 calculated by this method also agrees well with the measured data for an L-band 3-stage GaAs MESFET amplifier. It is shown that this method is effective for calculating frequency-dependent distortion of a nonlinear amplifier with broadband modulation signals.},
keywords={},
doi={},
ISSN={},
month={May},}
Copier
TY - JOUR
TI - A Distortion Analysis Method for FET Amplifiers Using Novel Frequency-Dependent Complex Power Series Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 737
EP - 743
AU - Kenichi HORIGUCHI
AU - Kazuhisa YAMAUCHI
AU - Kazutomi MORI
AU - Masatoshi NAKAYAMA
AU - Yukio IKEDA
AU - Tadashi TAKAGI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1999
AB - This paper proposes a new distortion analysis method for frequency-dependent FET amplifiers, which uses a novel Frequency-Dependent Complex Power Series (FDCPS) model. This model consists of a frequency-independent nonlinear amplifier represented by an odd-order complex power series and frequency-dependent input and output filters. The in-band frequency characteristics of the saturation region are represented by the frequency-dependent output filter, while the in-band frequency characteristics of the linear region are represented by the frequency-dependent input and output filters. In this method, the time-domain analysis is carried out to calculate the frequency-independent nonlinear amplifier characteristics, and the frequency-domain analysis is applied to calculate the frequency-dependent input and output filter characteristics. The third-order intermodulation (IM3) calculated by this method for a GaAs MESFET amplifier is in good agreement with the numerical results obtained by the Harmonic Balance (HB) method. Moreover, the IM3 calculated by this method also agrees well with the measured data for an L-band 3-stage GaAs MESFET amplifier. It is shown that this method is effective for calculating frequency-dependent distortion of a nonlinear amplifier with broadband modulation signals.
ER -