The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article décrit un amplificateur HFET AlGaAs/GaAs haute puissance et faible distorsion développé pour le système de station de base cellulaire numérique. Nous avons prouvé expérimentalement que les caractéristiques de distorsion telles que l'IMD (Intermodulation Distortion) ou le NPR (Noise Power Ratio) sont considérablement dégradées lorsque la valeur absolue de l'impédance du circuit de polarisation de drain à basse fréquence est élevée. Sur la base des résultats expérimentaux, nous avons conçu le circuit de polarisation de drain pour ne pas influencer les caractéristiques de distorsion. L'amplificateur développé utilisait deux paires de puces GaAs pré-adaptées montées sur un seul boîtier et la puissance de sortie totale était combinée dans une configuration push-pull avec un circuit balun microruban. L'amplificateur push-pull a démontré des performances de pointe avec une puissance de sortie de 140 W avec un gain linéaire de 11.5 dB à 2.2 GHz. De plus, il présentait des performances de distorsion extrêmement faibles, inférieures à
Isao TAKENAKA
Hidemasa TAKAHASHI
Kazunori ASANO
Kohji ISHIKURA
Junko MORIKAWA
Hiroaki TSUTSUI
Masaaki KUZUHARA
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Isao TAKENAKA, Hidemasa TAKAHASHI, Kazunori ASANO, Kohji ISHIKURA, Junko MORIKAWA, Hiroaki TSUTSUI, Masaaki KUZUHARA, "Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 5, pp. 730-736, May 1999, doi: .
Abstract: This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_5_730/_p
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@ARTICLE{e82-c_5_730,
author={Isao TAKENAKA, Hidemasa TAKAHASHI, Kazunori ASANO, Kohji ISHIKURA, Junko MORIKAWA, Hiroaki TSUTSUI, Masaaki KUZUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance},
year={1999},
volume={E82-C},
number={5},
pages={730-736},
abstract={This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than
keywords={},
doi={},
ISSN={},
month={May},}
Copier
TY - JOUR
TI - Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance
T2 - IEICE TRANSACTIONS on Electronics
SP - 730
EP - 736
AU - Isao TAKENAKA
AU - Hidemasa TAKAHASHI
AU - Kazunori ASANO
AU - Kohji ISHIKURA
AU - Junko MORIKAWA
AU - Hiroaki TSUTSUI
AU - Masaaki KUZUHARA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1999
AB - This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than
ER -