The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article présente une nouvelle technique de modélisation précise des dispositifs MOS à drain légèrement dopé haute tension (MOS HV) avec le modèle SPICE BSIM3v3. Les modèles SPICE standard ne modélisent pas la dépendance en tension de Rs et à la Rd dans les appareils HT MOS ; cela entraîne de grands écarts entre les caractéristiques IV simulées et mesurées des dispositifs HV MOS. Nous proposons d'attribuer des significations physiques et des valeurs différentes du modèle BSIM3v3 original à trois de ses paramètres pour représenter la dépendance en tension de Rs et à la Rd. Avec cette méthode, nous avons réussi à extraire des paramètres de manière très précise, et les caractéristiques IV simulées des dispositifs HV MOS utilisant les paramètres extraits correspondent bien aux résultats mesurés. La relation entre la technique de modélisation proposée et le mécanisme physique des dispositifs HT MOS est également discutée sur la base des résultats de mesures et de simulation de dispositifs. Étant donné que notre méthode ne modifie aucune équation du modèle BSIM3v3, elle peut être appliquée à n'importe quel simulateur SPICE sur lequel le modèle BSIM3v3 s'exécute. Nous pouvons donc utiliser la simulation SPICE pour une conception précise de circuits complexes utilisant des dispositifs MOS HT.
Takao MYONO
Eiji NISHIBE
Shuichi KIKUCHI
Katsuhiko IWATSU
Takuya SUZUKI
Yoshisato SASAKI
Kazuo ITOH
Haruo KOBAYASHI
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Copier
Takao MYONO, Eiji NISHIBE, Shuichi KIKUCHI, Katsuhiko IWATSU, Takuya SUZUKI, Yoshisato SASAKI, Kazuo ITOH, Haruo KOBAYASHI, "High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 4, pp. 630-637, April 1999, doi: .
Abstract: This paper presents a new technique for modeling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of Rs and Rd in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of Rs and Rd. With this method, we have succeeded in highly accurate parameter extraction, and the simulated I-V characteristics of HV MOS devices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measurement and device simulation results. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs, so we can use SPICE simulation for accurate circuit design of complex circuits using HV MOS devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_4_630/_p
Copier
@ARTICLE{e82-c_4_630,
author={Takao MYONO, Eiji NISHIBE, Shuichi KIKUCHI, Katsuhiko IWATSU, Takuya SUZUKI, Yoshisato SASAKI, Kazuo ITOH, Haruo KOBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model},
year={1999},
volume={E82-C},
number={4},
pages={630-637},
abstract={This paper presents a new technique for modeling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of Rs and Rd in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of Rs and Rd. With this method, we have succeeded in highly accurate parameter extraction, and the simulated I-V characteristics of HV MOS devices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measurement and device simulation results. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs, so we can use SPICE simulation for accurate circuit design of complex circuits using HV MOS devices.},
keywords={},
doi={},
ISSN={},
month={April},}
Copier
TY - JOUR
TI - High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 630
EP - 637
AU - Takao MYONO
AU - Eiji NISHIBE
AU - Shuichi KIKUCHI
AU - Katsuhiko IWATSU
AU - Takuya SUZUKI
AU - Yoshisato SASAKI
AU - Kazuo ITOH
AU - Haruo KOBAYASHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1999
AB - This paper presents a new technique for modeling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of Rs and Rd in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of Rs and Rd. With this method, we have succeeded in highly accurate parameter extraction, and the simulated I-V characteristics of HV MOS devices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measurement and device simulation results. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs, so we can use SPICE simulation for accurate circuit design of complex circuits using HV MOS devices.
ER -