The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Ce rapport décrit les circuits intégrés AlGaAs/GaAs HBT pour la transmission optique à 20 Gbit/s, les circuits de commande du préamplificateur et du modulateur optique, ainsi que les circuits intégrés pour les circuits d'extraction d'horloge à 10 Gbit/s, les circuits redresseur et déphaseur. Ces circuits intégrés ont été fabriqués à l'aide de notre processus de fabrication HBT (HG-FST) entièrement auto-aligné à anneau de garde hétéro développé. Le système multimétallique Pt-Ti-Pt-Au a également été utilisé comme métal ohmique de base pour réduire la résistance de contact de la base et une valeur élevée. fmax de 105 GHz a été obtenue. De bons résultats dans les performances des micro-ondes HBT IC ont été obtenus à partir des mesures sur tranche. Les préamplificateurs présentaient une large bande passante de 20 GHz. Le pilote du modulateur optique a effectué une oscillation de tension de sortie suffisamment importante de 9 VPP à un débit de données de 20 Go/s. Le redresseur et les circuits déphaseurs ont réalisé de bons fonctionnements à 10 Gb/s. Ces résultats suggèrent que ces circuits intégrés HBT peuvent être appliqués à des systèmes de transmission optique à 20 Gb/s et d'extraction d'horloge à 10 Gb/s.
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Nobuo NAGANO, Masaaki SODA, Hiroshi TEZUKA, Tetsuyuki SUZAKI, Kazuhiko HONJO, "AlGaAs/GaAs HBT ICs for 20-Gb/s Optical Transmission Systems" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 3, pp. 465-474, March 1999, doi: .
Abstract: This report describes AlGaAs/GaAs HBT ICs for 20-Gb/s optical transmission, the preamplifier and optical modulator driver circuits, and those ICs for 10-Gb/s clock extraction circuits, the rectifier and phase shifter circuits. These ICs were fabricated using our developed hetero guard-ring fully self-aligned HBT (HG-FST) fabrication process. The Pt-Ti-Pt-Au multimetal system was also used as a base ohmic metal to reduce base contact resistance, and a high fmax of 105 GHz was obtained. Good results in the HBT IC microwave performances were achieved from the on-wafer measurements. The preamplifiers exhibited the broad bandwidth of 20. 9 GHz. The optical modulator driver performed a sufficiently large output-voltage swing of 4-VP-P at a 20-Gb/s data rate. The rectifier and the phase shifter circuits achieved good operations at 10-Gb/s. These results suggest that these HBT ICs can be applied to 20-Gb/s optical transmission and 10-Gb/s clock extraction systems.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_465/_p
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@ARTICLE{e82-c_3_465,
author={Nobuo NAGANO, Masaaki SODA, Hiroshi TEZUKA, Tetsuyuki SUZAKI, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={AlGaAs/GaAs HBT ICs for 20-Gb/s Optical Transmission Systems},
year={1999},
volume={E82-C},
number={3},
pages={465-474},
abstract={This report describes AlGaAs/GaAs HBT ICs for 20-Gb/s optical transmission, the preamplifier and optical modulator driver circuits, and those ICs for 10-Gb/s clock extraction circuits, the rectifier and phase shifter circuits. These ICs were fabricated using our developed hetero guard-ring fully self-aligned HBT (HG-FST) fabrication process. The Pt-Ti-Pt-Au multimetal system was also used as a base ohmic metal to reduce base contact resistance, and a high fmax of 105 GHz was obtained. Good results in the HBT IC microwave performances were achieved from the on-wafer measurements. The preamplifiers exhibited the broad bandwidth of 20. 9 GHz. The optical modulator driver performed a sufficiently large output-voltage swing of 4-VP-P at a 20-Gb/s data rate. The rectifier and the phase shifter circuits achieved good operations at 10-Gb/s. These results suggest that these HBT ICs can be applied to 20-Gb/s optical transmission and 10-Gb/s clock extraction systems.},
keywords={},
doi={},
ISSN={},
month={March},}
Copier
TY - JOUR
TI - AlGaAs/GaAs HBT ICs for 20-Gb/s Optical Transmission Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 465
EP - 474
AU - Nobuo NAGANO
AU - Masaaki SODA
AU - Hiroshi TEZUKA
AU - Tetsuyuki SUZAKI
AU - Kazuhiko HONJO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - This report describes AlGaAs/GaAs HBT ICs for 20-Gb/s optical transmission, the preamplifier and optical modulator driver circuits, and those ICs for 10-Gb/s clock extraction circuits, the rectifier and phase shifter circuits. These ICs were fabricated using our developed hetero guard-ring fully self-aligned HBT (HG-FST) fabrication process. The Pt-Ti-Pt-Au multimetal system was also used as a base ohmic metal to reduce base contact resistance, and a high fmax of 105 GHz was obtained. Good results in the HBT IC microwave performances were achieved from the on-wafer measurements. The preamplifiers exhibited the broad bandwidth of 20. 9 GHz. The optical modulator driver performed a sufficiently large output-voltage swing of 4-VP-P at a 20-Gb/s data rate. The rectifier and the phase shifter circuits achieved good operations at 10-Gb/s. These results suggest that these HBT ICs can be applied to 20-Gb/s optical transmission and 10-Gb/s clock extraction systems.
ER -