The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Modèles particuliers de SiO2 une contamination autour de la périphérie de la trace de contact provoquée par des vapeurs de silicone lors d'une commutation à la limite de 1.6 W a été confirmée. Pour les microrelais, les conditions d'alimentation électrique sont limitées à un niveau inférieur. Il est donc important de déterminer la limite supérieure des conditions d’alimentation électrique pour un fonctionnement normal. Ce schéma particulier est important car il est reconnu comme la première étape de l’apparition d’une défaillance de contact. Les causes de ce phénomène ont été discutées du point de vue de la répartition de la température dans la trace de contact, du pont métallique fondu, de la décharge de micro-arc et de l'apport de vapeur de silicone en oxygène. Il est proposé que pendant la fermeture des contacts, comme un échauffement Joule maximum se produit à la périphérie de la véritable zone de contact et que la vapeur de silicone avec de l'oxygène est facilement fournie à la périphérie, SiO2 se développe autour de la trace de contact. Pour les contacts d'ouverture, au fur et à mesure de l'apparition du pont ou du micro-arc, la vapeur de silicone contenant de l'oxygène est fournie uniquement à l'extérieur des contacts. Ainsi SiO2 se forme principalement à la périphérie de la trace. De plus, SiO2 était dispersé radialement en fonction de la pulvérisation du métal en fusion lors de la rupture du pont. Par conséquent, le motif particulier se forme en conséquence.
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Terutaka TAMAI, "Peculiar Patterns of SiO2 Contamination on the Contact Surface of a Micro Relay Operated in a Silicone Vapor Environment" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 1, pp. 81-85, January 1999, doi: .
Abstract: Peculiar patterns of SiO2 contamination around the periphery of the contact trace caused by silicone vapor under switching at the boundary of 1.6 W were confirmed. For micro relays, the electrical power conditions are restricted to lower level. Therefore, it is important to ascertain the upper limit of the electrical power conditions for normal operation. The peculiar pattern is important as it is recognized as the first stage of the origination of contact failure. Causes of this pattern were discussed from the viewpoints of temperature distribution in the contact trace, molten metallic bridge, micro arc discharge, and supply of silicone vapor with oxygen. It is proposed that during the closing contacts, as maximum Joule heating occurs at the periphery of the true contact area and silicone vapor with oxygen is easily supplied at the periphery, SiO2 grows around the contact trace. For the opening contacts, as the bridge or micro arc appears, silicone vapor with oxygen is supplied only outside of the contacts. Thus SiO2 is formed mainly around the periphery of the trace. Moreover, SiO2 was scattered radially depending on the sputtering of molten metal under rupture of the bridge. Therefore, the peculiar pattern forms as a result.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_1_81/_p
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@ARTICLE{e82-c_1_81,
author={Terutaka TAMAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Peculiar Patterns of SiO2 Contamination on the Contact Surface of a Micro Relay Operated in a Silicone Vapor Environment},
year={1999},
volume={E82-C},
number={1},
pages={81-85},
abstract={Peculiar patterns of SiO2 contamination around the periphery of the contact trace caused by silicone vapor under switching at the boundary of 1.6 W were confirmed. For micro relays, the electrical power conditions are restricted to lower level. Therefore, it is important to ascertain the upper limit of the electrical power conditions for normal operation. The peculiar pattern is important as it is recognized as the first stage of the origination of contact failure. Causes of this pattern were discussed from the viewpoints of temperature distribution in the contact trace, molten metallic bridge, micro arc discharge, and supply of silicone vapor with oxygen. It is proposed that during the closing contacts, as maximum Joule heating occurs at the periphery of the true contact area and silicone vapor with oxygen is easily supplied at the periphery, SiO2 grows around the contact trace. For the opening contacts, as the bridge or micro arc appears, silicone vapor with oxygen is supplied only outside of the contacts. Thus SiO2 is formed mainly around the periphery of the trace. Moreover, SiO2 was scattered radially depending on the sputtering of molten metal under rupture of the bridge. Therefore, the peculiar pattern forms as a result.},
keywords={},
doi={},
ISSN={},
month={January},}
Copier
TY - JOUR
TI - Peculiar Patterns of SiO2 Contamination on the Contact Surface of a Micro Relay Operated in a Silicone Vapor Environment
T2 - IEICE TRANSACTIONS on Electronics
SP - 81
EP - 85
AU - Terutaka TAMAI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1999
AB - Peculiar patterns of SiO2 contamination around the periphery of the contact trace caused by silicone vapor under switching at the boundary of 1.6 W were confirmed. For micro relays, the electrical power conditions are restricted to lower level. Therefore, it is important to ascertain the upper limit of the electrical power conditions for normal operation. The peculiar pattern is important as it is recognized as the first stage of the origination of contact failure. Causes of this pattern were discussed from the viewpoints of temperature distribution in the contact trace, molten metallic bridge, micro arc discharge, and supply of silicone vapor with oxygen. It is proposed that during the closing contacts, as maximum Joule heating occurs at the periphery of the true contact area and silicone vapor with oxygen is easily supplied at the periphery, SiO2 grows around the contact trace. For the opening contacts, as the bridge or micro arc appears, silicone vapor with oxygen is supplied only outside of the contacts. Thus SiO2 is formed mainly around the periphery of the trace. Moreover, SiO2 was scattered radially depending on the sputtering of molten metal under rupture of the bridge. Therefore, the peculiar pattern forms as a result.
ER -