The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Un Si cultivé sélectivement1-xGex Un transistor bipolaire à hétérojonction de base (HBT) a été fabriqué et les effets des profils Ge et B sur les performances du dispositif ont été étudiés. Puisqu’aucun courant de fuite évident n’a été observé, il est démontré qu’une bonne cristallinité du Si1-xGex a été réalisé en utilisant un système UHV/CVD avec H haute pression2 pré-nettoyage du support. Un gain de courant très élevé de 29,000 130 a été obtenu dans un HBT avec un profil Ge uniforme en augmentant à la fois l'injection d'électrons de l'émetteur vers la base et en réduisant l'énergie de la bande interdite dans la base. Étant donné que la tension précoce est affectée par la gradation de la teneur en Ge dans la base, le HBT avec le profil Ge progressif fournit une tension précoce très élevée. Cependant, la tension de claquage est dégradée par l'augmentation de la teneur en Ge en raison de la réduction de l'énergie de la bande interdite et de la modification du profil du dopant. Pour augmenter la fréquence de coupure, la diffusion des dopants doit être supprimée et l'accélération des porteurs par le champ de dérive interne avec le profil Ge gradué a un effet supplémentaire. Ce faisant, une fréquence de coupure extrêmement élevée de XNUMX GHz a été obtenue en HBT avec des profils Ge gradués.
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Katsuya ODA, Eiji OHUE, Masamichi TANABE, Hiromi SHIMAMOTO, Katsuyoshi WASHIO, "DC and AC Performances in Selectively Grown SiGe-Base HBTs" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 2013-2020, November 1999, doi: .
Abstract: A selectively grown Si1-xGex base heterojunction bipolar transistor (HBT) was fabricated, and effects of Ge and B profiles on the device performance were investigated. Since no obvious leakage current was observed, it is shown that good crystallinity of Si1-xGex was achieved by using a UHV/CVD system with high-pressure H2 pre-cleaning of the substrate. Very high current gain of 29,000 was obtained in an HBT with a uniform Ge profile by both increasing electron injection from the emitter to the base and reducing band gap energy in the base. Since the Early voltage is affected by the grading of Ge content in the base, the HBT with the graded Ge profile provides very high Early voltage. However, the breakdown voltage is degraded by increasing Ge content because of reducing bandgap energy and changing dopant profile. To increase the cutoff frequency, dopant diffusion must be suppressed, and carrier acceleration by the internal drift field with the graded Ge profile has an additional effect. By doing them, an extremely high cutoff frequency of 130 GHz was obtained in HBT with graded Ge profiles.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_2013/_p
Copier
@ARTICLE{e82-c_11_2013,
author={Katsuya ODA, Eiji OHUE, Masamichi TANABE, Hiromi SHIMAMOTO, Katsuyoshi WASHIO, },
journal={IEICE TRANSACTIONS on Electronics},
title={DC and AC Performances in Selectively Grown SiGe-Base HBTs},
year={1999},
volume={E82-C},
number={11},
pages={2013-2020},
abstract={A selectively grown Si1-xGex base heterojunction bipolar transistor (HBT) was fabricated, and effects of Ge and B profiles on the device performance were investigated. Since no obvious leakage current was observed, it is shown that good crystallinity of Si1-xGex was achieved by using a UHV/CVD system with high-pressure H2 pre-cleaning of the substrate. Very high current gain of 29,000 was obtained in an HBT with a uniform Ge profile by both increasing electron injection from the emitter to the base and reducing band gap energy in the base. Since the Early voltage is affected by the grading of Ge content in the base, the HBT with the graded Ge profile provides very high Early voltage. However, the breakdown voltage is degraded by increasing Ge content because of reducing bandgap energy and changing dopant profile. To increase the cutoff frequency, dopant diffusion must be suppressed, and carrier acceleration by the internal drift field with the graded Ge profile has an additional effect. By doing them, an extremely high cutoff frequency of 130 GHz was obtained in HBT with graded Ge profiles.},
keywords={},
doi={},
ISSN={},
month={November},}
Copier
TY - JOUR
TI - DC and AC Performances in Selectively Grown SiGe-Base HBTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 2013
EP - 2020
AU - Katsuya ODA
AU - Eiji OHUE
AU - Masamichi TANABE
AU - Hiromi SHIMAMOTO
AU - Katsuyoshi WASHIO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A selectively grown Si1-xGex base heterojunction bipolar transistor (HBT) was fabricated, and effects of Ge and B profiles on the device performance were investigated. Since no obvious leakage current was observed, it is shown that good crystallinity of Si1-xGex was achieved by using a UHV/CVD system with high-pressure H2 pre-cleaning of the substrate. Very high current gain of 29,000 was obtained in an HBT with a uniform Ge profile by both increasing electron injection from the emitter to the base and reducing band gap energy in the base. Since the Early voltage is affected by the grading of Ge content in the base, the HBT with the graded Ge profile provides very high Early voltage. However, the breakdown voltage is degraded by increasing Ge content because of reducing bandgap energy and changing dopant profile. To increase the cutoff frequency, dopant diffusion must be suppressed, and carrier acceleration by the internal drift field with the graded Ge profile has an additional effect. By doing them, an extremely high cutoff frequency of 130 GHz was obtained in HBT with graded Ge profiles.
ER -