The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Un FET à hétérostructure AlGaAs/GaAs de 100 W à faible distorsion a été développé pour les stations de base cellulaires CDMA. Ce FET utilise le doigt de grille le plus long jamais signalé, soit 800 µm, pour réduire la taille de la puce. La taille de la puce et du boîtier est miniaturisée à 1.24
Seiki GOTO
Kenichi FUJII
Tetsuo KUNII
Satoshi SUZUKI
Hiroshi KAWATA
Shinichi MIYAKUNI
Naohito YOSHIDA
Susumu SAKAMOTO
Takashi FUJIOKA
Noriyuki TANINO
Kazunao SATO
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Seiki GOTO, Kenichi FUJII, Tetsuo KUNII, Satoshi SUZUKI, Hiroshi KAWATA, Shinichi MIYAKUNI, Naohito YOSHIDA, Susumu SAKAMOTO, Takashi FUJIOKA, Noriyuki TANINO, Kazunao SATO, "A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 1936-1942, November 1999, doi: .
Abstract: A 100 W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 µm to shrink the chip size. The size of the chip and the package are miniaturized to 1.24
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1936/_p
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@ARTICLE{e82-c_11_1936,
author={Seiki GOTO, Kenichi FUJII, Tetsuo KUNII, Satoshi SUZUKI, Hiroshi KAWATA, Shinichi MIYAKUNI, Naohito YOSHIDA, Susumu SAKAMOTO, Takashi FUJIOKA, Noriyuki TANINO, Kazunao SATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications},
year={1999},
volume={E82-C},
number={11},
pages={1936-1942},
abstract={A 100 W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 µm to shrink the chip size. The size of the chip and the package are miniaturized to 1.24
keywords={},
doi={},
ISSN={},
month={November},}
Copier
TY - JOUR
TI - A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1936
EP - 1942
AU - Seiki GOTO
AU - Kenichi FUJII
AU - Tetsuo KUNII
AU - Satoshi SUZUKI
AU - Hiroshi KAWATA
AU - Shinichi MIYAKUNI
AU - Naohito YOSHIDA
AU - Susumu SAKAMOTO
AU - Takashi FUJIOKA
AU - Noriyuki TANINO
AU - Kazunao SATO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A 100 W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 µm to shrink the chip size. The size of the chip and the package are miniaturized to 1.24
ER -