The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Un amplificateur de puissance MMIC (circuit intégré monolithique à micro-ondes) AlGaAs/GaAs HBT (transistor bipolaire à hétérojonction) GSM900/DCS1800 a été développé. Il comprend des amplificateurs de puissance pour GSM900 et DCS1800, des circuits de polarisation à tension constante et un commutateur CC. Afin d'obtenir un rendement élevé, la disposition base extérieure/centre via trou est appliquée au HBT de l'étage final de l'amplificateur MMIC. La disposition peut réaliser une impédance de charge de sortie et une répartition thermique uniformes de chaque doigt HBT. L'amplificateur MMIC développé pourrait fournir une puissance de sortie de 34.5 dBm et un rendement de puissance ajoutée de 53.4 % pour le GSM900, et une puissance de sortie de 32.0 dBm et un rendement de puissance ajoutée de 41.8 % pour le DCS1800.
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Kazutomi MORI, Kenichiro CHOUMEI, Teruyuki SHIMURA, Tadashi TAKAGI, Yukio IKEDA, Osami ISHIDA, "A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 1913-1920, November 1999, doi: .
Abstract: A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1913/_p
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@ARTICLE{e82-c_11_1913,
author={Kazutomi MORI, Kenichiro CHOUMEI, Teruyuki SHIMURA, Tadashi TAKAGI, Yukio IKEDA, Osami ISHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT},
year={1999},
volume={E82-C},
number={11},
pages={1913-1920},
abstract={A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.},
keywords={},
doi={},
ISSN={},
month={November},}
Copier
TY - JOUR
TI - A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT
T2 - IEICE TRANSACTIONS on Electronics
SP - 1913
EP - 1920
AU - Kazutomi MORI
AU - Kenichiro CHOUMEI
AU - Teruyuki SHIMURA
AU - Tadashi TAKAGI
AU - Yukio IKEDA
AU - Osami ISHIDA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.
ER -