The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Dans cet article, un nouveau schéma de compensation et une structure d'éléments de passage correspondante pour un régulateur à faible chute (LDO) CMOS sont présentés. L'approche proposée atténue efficacement la stricte contrainte de stabilité sur l'ESR du condensateur de sortie. La stabilité d'un LDO CMOS avec la compensation conventionnelle nécessite la résistance série effective (ESR) du condensateur de sortie dans une région de type tunnel. Avec l'approche de conception proposée, un LDO peut être stable en utilisant un condensateur de sortie sans ESR. Un LDO 2.5 V/150 mA a été implémenté à l'aide d'un processus CMOS 0.5P1M de 2 µm. Les résultats expérimentaux illustrent que le LDO proposé est stable avec un condensateur de sortie de 0.33 µF et aucun ESR.
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Hsuan-I PAN, Chern-Lin CHEN, "A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 8, pp. 1356-1364, August 2008, doi: 10.1093/ietele/e91-c.8.1356.
Abstract: In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.8.1356/_p
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@ARTICLE{e91-c_8_1356,
author={Hsuan-I PAN, Chern-Lin CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor},
year={2008},
volume={E91-C},
number={8},
pages={1356-1364},
abstract={In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.},
keywords={},
doi={10.1093/ietele/e91-c.8.1356},
ISSN={1745-1353},
month={August},}
Copier
TY - JOUR
TI - A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor
T2 - IEICE TRANSACTIONS on Electronics
SP - 1356
EP - 1364
AU - Hsuan-I PAN
AU - Chern-Lin CHEN
PY - 2008
DO - 10.1093/ietele/e91-c.8.1356
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2008
AB - In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.
ER -