The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous avons développé des HBT basés sur InP à émetteur de 0.5 µm avec une grande fiabilité. Les HBT intègrent une structure de rebord de passivation et un métal émetteur à base de tungstène. Un HBT fabriqué présente une densité de courant de collecteur élevée et un gain de courant de 58 à une densité de courant de collecteur de 4 mA/µm2. Les résultats des mesures en courant continu indiquent que la couche de rebord supprime suffisamment le courant de recombinaison à la périphérie émetteur-base. Le HBT présente également un ft de 321 GHz et un fmax de 301 GHz à une densité de courant de collecteur de 4 mA/µm2L’ ft ne se dégrade pas même si la taille de l'émetteur est réduite à 0.5 µm
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Norihide KASHIO, Kenji KURISHIMA, Yoshino K. FUKAI, Shoji YAMAHATA, "Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1084-1090, July 2008, doi: 10.1093/ietele/e91-c.7.1084.
Abstract: We have developed 0.5-µm-emitter InP-based HBTs with high reliability. The HBTs incorporate a passivation ledge structure and tungsten-based emitter metal. A fabricated HBT exhibits high collector current density and a current gain of 58 at a collector current density of 4 mA/µm2. The results of dc measurements indicate that the ledge layer sufficiently suppresses the recombination current at the emitter-base periphery. The HBT also exhibits an ft of 321 GHz and an fmax of 301 GHz at a collector current density of 4 mA/µm2. The ft does not degrade even though the emitter size is reduced to as small as 0.5 µm
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1084/_p
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@ARTICLE{e91-c_7_1084,
author={Norihide KASHIO, Kenji KURISHIMA, Yoshino K. FUKAI, Shoji YAMAHATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft},
year={2008},
volume={E91-C},
number={7},
pages={1084-1090},
abstract={We have developed 0.5-µm-emitter InP-based HBTs with high reliability. The HBTs incorporate a passivation ledge structure and tungsten-based emitter metal. A fabricated HBT exhibits high collector current density and a current gain of 58 at a collector current density of 4 mA/µm2. The results of dc measurements indicate that the ledge layer sufficiently suppresses the recombination current at the emitter-base periphery. The HBT also exhibits an ft of 321 GHz and an fmax of 301 GHz at a collector current density of 4 mA/µm2. The ft does not degrade even though the emitter size is reduced to as small as 0.5 µm
keywords={},
doi={10.1093/ietele/e91-c.7.1084},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft
T2 - IEICE TRANSACTIONS on Electronics
SP - 1084
EP - 1090
AU - Norihide KASHIO
AU - Kenji KURISHIMA
AU - Yoshino K. FUKAI
AU - Shoji YAMAHATA
PY - 2008
DO - 10.1093/ietele/e91-c.7.1084
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - We have developed 0.5-µm-emitter InP-based HBTs with high reliability. The HBTs incorporate a passivation ledge structure and tungsten-based emitter metal. A fabricated HBT exhibits high collector current density and a current gain of 58 at a collector current density of 4 mA/µm2. The results of dc measurements indicate that the ledge layer sufficiently suppresses the recombination current at the emitter-base periphery. The HBT also exhibits an ft of 321 GHz and an fmax of 301 GHz at a collector current density of 4 mA/µm2. The ft does not degrade even though the emitter size is reduced to as small as 0.5 µm
ER -