The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Dans les transistors AlGaN/GaN à haute mobilité électronique (HEMT), la réduction du courant de drain par phénomène d'effondrement du courant constitue un obstacle majeur au fonctionnement très efficace des applications d'amplificateur de puissance. Dans cette étude, nous avons étudié les effets de la qualité du film de passivation SiN sur les caractéristiques électriques des HEMT AlGaN/GaN. Tout d’abord, nous avons mené des expériences pour étudier la relation entre les caractéristiques électriques des HEMT AlGaN/GaN et diverses conditions du film de passivation SiN par dépôt chimique en phase vapeur assisté par plasma (PE-CVD). Nous avons constaté que la fuite de courant de grille et l'effondrement du courant étaient améliorés simultanément par le film de passivation SiN déposé dans des conditions optimisées de NH.3 et SiH4 flux du gaz. On constate que le paramètre critique dans l'optimisation est un INH/ JeSi-H rapport mesuré par les spectres de spectroscopie infrarouge à transformée de Fourier (FT-IR). Ensuite, un SiN CVD thermique a été appliqué au film de passivation pour être étudié du même point de vue, car un SiN CVD thermique est bien connu pour avoir une bonne qualité avec une faible teneur en hydrogène et un I élevé.NH/ISi-H rapport. Nous avons confirmé que la passivation thermique CVD SiN pourrait améliorer encore davantage le courant de fuite de grille et l'effondrement du courant dans les AlGaN/GaN-HEMT. De plus, nous avons essayé d'appliquer le CVD thermique SiN à l'isolant de grille dans la structure MIS (Metal Insulator Semiconductor) des HEMT AlGaN/GaN. La passivation thermique CVD SiN était plus adaptée à l'isolant de grille que la passivation PE-CVD SiN en vue de réduire les phénomènes d'effondrement du courant. On pourrait croire que le film thermique CVD SiN est supérieur au film PE-CVD SiN pour obtenir une bonne passivation et un bon film isolant de grille pour les HEMT AlGaN/GaN en raison de la faible teneur en hydrogène et de l'I élevé.NH/ISi-H ratio.
Toshiharu MARUI
Shinich HOSHI
Masanori ITOH
Isao TAMAI
Fumihiko TODA
Hideyuki OKITA
Yoshiaki SANO
Shohei SEKI
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Toshiharu MARUI, Shinich HOSHI, Masanori ITOH, Isao TAMAI, Fumihiko TODA, Hideyuki OKITA, Yoshiaki SANO, Shohei SEKI, "Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1009-1014, July 2008, doi: 10.1093/ietele/e91-c.7.1009.
Abstract: In AlGaN/GaN high electron mobility transistors (HEMTs), drain current reduction by current collapse phenomenon is a big obstacle for a high efficient operation of power amplifier application. In this study, we investigated the effects of SiN passivation film quality on the electrical characteristics of AlGaN/GaN HEMTs. First, we conducted some experiments to investigate the relationship between electrical characteristics of AlGaN/GaN HEMTs and various conditions of SiN passivation film by plasma enhanced chemical vapor deposition (PE-CVD). We found that both gate current leakage and current collapse were improved simultaneously by SiN passivation film deposited by optimized condition of NH3 and SiH4 gas flow. It is found that the critical parameter in the optimization is a IN-H/ ISi-H ratio measured by Fourier transforms infrared spectroscopy (FT-IR) spectra. Next, a thermal CVD SiN was applied to the passivation film to be investigated from the same point of view, because a thermal CVD SiN is well known to have good quality with low hydrogen content and high IN-H/ISi-H ratio. We confirmed that the thermal CVD SiN passivation could improve much further both of the gate leakage current and the current collapse in AlGaN/GaN-HEMTs. Furthermore, we tried to apply the thermal CVD SiN to the gate insulator in MIS (Metal Insulator Semiconductor) structure of AlGaN/GaN HEMTs. The thermal CVD SiN passivation was more suitable for the gate insulator than PE-CVD SiN passivation in a view of reducing current collapse phenomena. It could be believed that the thermal CVD SiN film is superior to the PE-CVD SiN film to achieve good passivation and gate insulator film for AlGaN/GaN HEMTs due to the low hydrogen content and the high IN-H/ISi-H ratio.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1009/_p
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@ARTICLE{e91-c_7_1009,
author={Toshiharu MARUI, Shinich HOSHI, Masanori ITOH, Isao TAMAI, Fumihiko TODA, Hideyuki OKITA, Yoshiaki SANO, Shohei SEKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs},
year={2008},
volume={E91-C},
number={7},
pages={1009-1014},
abstract={In AlGaN/GaN high electron mobility transistors (HEMTs), drain current reduction by current collapse phenomenon is a big obstacle for a high efficient operation of power amplifier application. In this study, we investigated the effects of SiN passivation film quality on the electrical characteristics of AlGaN/GaN HEMTs. First, we conducted some experiments to investigate the relationship between electrical characteristics of AlGaN/GaN HEMTs and various conditions of SiN passivation film by plasma enhanced chemical vapor deposition (PE-CVD). We found that both gate current leakage and current collapse were improved simultaneously by SiN passivation film deposited by optimized condition of NH3 and SiH4 gas flow. It is found that the critical parameter in the optimization is a IN-H/ ISi-H ratio measured by Fourier transforms infrared spectroscopy (FT-IR) spectra. Next, a thermal CVD SiN was applied to the passivation film to be investigated from the same point of view, because a thermal CVD SiN is well known to have good quality with low hydrogen content and high IN-H/ISi-H ratio. We confirmed that the thermal CVD SiN passivation could improve much further both of the gate leakage current and the current collapse in AlGaN/GaN-HEMTs. Furthermore, we tried to apply the thermal CVD SiN to the gate insulator in MIS (Metal Insulator Semiconductor) structure of AlGaN/GaN HEMTs. The thermal CVD SiN passivation was more suitable for the gate insulator than PE-CVD SiN passivation in a view of reducing current collapse phenomena. It could be believed that the thermal CVD SiN film is superior to the PE-CVD SiN film to achieve good passivation and gate insulator film for AlGaN/GaN HEMTs due to the low hydrogen content and the high IN-H/ISi-H ratio.},
keywords={},
doi={10.1093/ietele/e91-c.7.1009},
ISSN={1745-1353},
month={July},}
Copier
TY - JOUR
TI - Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1009
EP - 1014
AU - Toshiharu MARUI
AU - Shinich HOSHI
AU - Masanori ITOH
AU - Isao TAMAI
AU - Fumihiko TODA
AU - Hideyuki OKITA
AU - Yoshiaki SANO
AU - Shohei SEKI
PY - 2008
DO - 10.1093/ietele/e91-c.7.1009
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - In AlGaN/GaN high electron mobility transistors (HEMTs), drain current reduction by current collapse phenomenon is a big obstacle for a high efficient operation of power amplifier application. In this study, we investigated the effects of SiN passivation film quality on the electrical characteristics of AlGaN/GaN HEMTs. First, we conducted some experiments to investigate the relationship between electrical characteristics of AlGaN/GaN HEMTs and various conditions of SiN passivation film by plasma enhanced chemical vapor deposition (PE-CVD). We found that both gate current leakage and current collapse were improved simultaneously by SiN passivation film deposited by optimized condition of NH3 and SiH4 gas flow. It is found that the critical parameter in the optimization is a IN-H/ ISi-H ratio measured by Fourier transforms infrared spectroscopy (FT-IR) spectra. Next, a thermal CVD SiN was applied to the passivation film to be investigated from the same point of view, because a thermal CVD SiN is well known to have good quality with low hydrogen content and high IN-H/ISi-H ratio. We confirmed that the thermal CVD SiN passivation could improve much further both of the gate leakage current and the current collapse in AlGaN/GaN-HEMTs. Furthermore, we tried to apply the thermal CVD SiN to the gate insulator in MIS (Metal Insulator Semiconductor) structure of AlGaN/GaN HEMTs. The thermal CVD SiN passivation was more suitable for the gate insulator than PE-CVD SiN passivation in a view of reducing current collapse phenomena. It could be believed that the thermal CVD SiN film is superior to the PE-CVD SiN film to achieve good passivation and gate insulator film for AlGaN/GaN HEMTs due to the low hydrogen content and the high IN-H/ISi-H ratio.
ER -