The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Le mécanisme d'effondrement du courant des transistors à effet de champ à hétérojonction (HFET) AlGaN/GaN a été étudié par contrainte de polarisation de grille avec et sans éclairage. Il est précisé qu'il existe deux positions où les charges négatives s'accumulent, au bord de la grille et dans l'épi-couche globale. En mode grille-bord, la charge passe soit par le film de passivation, soit par la couche d'AlGaN, en fonction de la résistance des films. La réduction du courant de fuite dans le film de passivation sera importante pour supprimer l’effondrement lié à la surface.
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Jin-Ping AO, Yuya YAMAOKA, Masaya OKADA, Cheng-Yu HU, Yasuo OHNO, "Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1004-1008, July 2008, doi: 10.1093/ietele/e91-c.7.1004.
Abstract: The mechanism of current collapse of AlGaN/GaN heterojunction field-effect transistors (HFETs) was investigated by gate bias stress with and without illumination. It is clarified that there are two positions where negative charges accumulate, at the gate edge and in the bulk epi-layer. In the gate-edge mode, the charge comes either through the passivation film or the AlGaN layer, depending on the resistance of the films. Reduction of leakage current in the passivation film will be important to suppress the surface-related collapse.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1004/_p
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@ARTICLE{e91-c_7_1004,
author={Jin-Ping AO, Yuya YAMAOKA, Masaya OKADA, Cheng-Yu HU, Yasuo OHNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress},
year={2008},
volume={E91-C},
number={7},
pages={1004-1008},
abstract={The mechanism of current collapse of AlGaN/GaN heterojunction field-effect transistors (HFETs) was investigated by gate bias stress with and without illumination. It is clarified that there are two positions where negative charges accumulate, at the gate edge and in the bulk epi-layer. In the gate-edge mode, the charge comes either through the passivation film or the AlGaN layer, depending on the resistance of the films. Reduction of leakage current in the passivation film will be important to suppress the surface-related collapse.},
keywords={},
doi={10.1093/ietele/e91-c.7.1004},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
T2 - IEICE TRANSACTIONS on Electronics
SP - 1004
EP - 1008
AU - Jin-Ping AO
AU - Yuya YAMAOKA
AU - Masaya OKADA
AU - Cheng-Yu HU
AU - Yasuo OHNO
PY - 2008
DO - 10.1093/ietele/e91-c.7.1004
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - The mechanism of current collapse of AlGaN/GaN heterojunction field-effect transistors (HFETs) was investigated by gate bias stress with and without illumination. It is clarified that there are two positions where negative charges accumulate, at the gate edge and in the bulk epi-layer. In the gate-edge mode, the charge comes either through the passivation film or the AlGaN layer, depending on the resistance of the films. Reduction of leakage current in the passivation film will be important to suppress the surface-related collapse.
ER -