The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous avons fabriqué des transistors à couches minces (TFT) et des diodes en utilisant de l'oxyde de zinc (ZnO) et du pentacène, et avons étudié leurs caractéristiques de base. Nous avons constaté que la mobilité par effet de champ est influencée par l'état de l'interface entre les couches semi-conductrices et diélectriques. De plus, l'onduleur CMOS (Complementary Metal Oxyde Semiconductor) utilisant un transistor à effet de champ (FET) pentacène à canal P et un FET ZnO à canal N a montré un gain de tension relativement élevé (8-12) en optimisant la structure du dispositif. Les onduleurs complémentaires hybrides décrits ici devraient être utilisés dans les écrans flexibles, les étiquettes de cartes d'identification par radiofréquence (RFID), etc.
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Hiroyuki IECHI, Yasuyuki WATANABE, Hiroshi YAMAUCHI, Kazuhiro KUDO, "Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 12, pp. 1843-1847, December 2008, doi: 10.1093/ietele/e91-c.12.1843.
Abstract: We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.12.1843/_p
Copier
@ARTICLE{e91-c_12_1843,
author={Hiroyuki IECHI, Yasuyuki WATANABE, Hiroshi YAMAUCHI, Kazuhiro KUDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters},
year={2008},
volume={E91-C},
number={12},
pages={1843-1847},
abstract={We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.},
keywords={},
doi={10.1093/ietele/e91-c.12.1843},
ISSN={1745-1353},
month={December},}
Copier
TY - JOUR
TI - Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters
T2 - IEICE TRANSACTIONS on Electronics
SP - 1843
EP - 1847
AU - Hiroyuki IECHI
AU - Yasuyuki WATANABE
AU - Hiroshi YAMAUCHI
AU - Kazuhiro KUDO
PY - 2008
DO - 10.1093/ietele/e91-c.12.1843
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2008
AB - We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.
ER -