The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Dans cet article, nous avons proposé une nouvelle méthode de dépôt oblique à haut débit utilisant deux sources de pulvérisation cathodique pour obtenir du SiO.2 films pour une couche d'alignement de cristaux liquides. Une source de pulvérisation qui fonctionne en mode métal fournit des atomes de Si à un substrat, et l'autre source qui fonctionne en mode oxyde fournit des radicaux d'oxygène à un substrat. Pour réduire la pression du gaz d'une chambre de dépôt et faire fonctionner les deux sources de pulvérisation cathodique dans des modes différents, les sources de pulvérisation cathodique ont été séparées de la chambre de dépôt par des mailles en acier inoxydable, et les gaz Ar et oxygène ont été introduits séparément à travers les deux sources de pulvérisation, c'est-à-dire Ar. du gaz a été introduit via la source d'alimentation en Si et de l'oxygène gazeux a été introduit via la source de radicaux oxygène. Lorsque du gaz Ar de 30 sccm et de l'oxygène gazeux de 4 sccm ont été introduits dans le système, la pression du gaz de la chambre de dépôt a été maintenue en dessous de 1.7 mTorr et les films ont été déposés sous un angle d'incidence supérieur à 70.
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Yoichi HOSHI, Kensuke YAGI, Eisuke SUZUKI, Hao LEI, Akira SAKAI, "High-Rate Oblique Deposition of SiO2 Films Using Two Sputtering Sources" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 10, pp. 1644-1648, October 2008, doi: 10.1093/ietele/e91-c.10.1644.
Abstract: In this paper, we proposed a new high-rate oblique deposition method using two sputtering sources to obtain SiO2 films for a liquid crystal alignment layer. One sputtering source that operates in a metal mode supplies Si atoms to a substrate, and the other source that operates in an oxide mode supplies oxygen radicals to a substrate. To reduce the gas pressure of a deposition chamber and make the two sputtering sources operate in different modes, the sputtering sources were separated from the deposition chamber with stainless meshes, and Ar and oxygen gases were introduced separately through the two sputtering sources, i.e., Ar gas was introduced through the Si supply source and oxygen gas was introduced through the oxygen radical source. When Ar gas of 30 sccm and oxygen gas of 4 sccm were introduced into the system, the gas pressure of the deposition chamber was maintained below 1.7 mTorr and the films deposited at an incidence angle of more than 70
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.10.1644/_p
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@ARTICLE{e91-c_10_1644,
author={Yoichi HOSHI, Kensuke YAGI, Eisuke SUZUKI, Hao LEI, Akira SAKAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Rate Oblique Deposition of SiO2 Films Using Two Sputtering Sources},
year={2008},
volume={E91-C},
number={10},
pages={1644-1648},
abstract={In this paper, we proposed a new high-rate oblique deposition method using two sputtering sources to obtain SiO2 films for a liquid crystal alignment layer. One sputtering source that operates in a metal mode supplies Si atoms to a substrate, and the other source that operates in an oxide mode supplies oxygen radicals to a substrate. To reduce the gas pressure of a deposition chamber and make the two sputtering sources operate in different modes, the sputtering sources were separated from the deposition chamber with stainless meshes, and Ar and oxygen gases were introduced separately through the two sputtering sources, i.e., Ar gas was introduced through the Si supply source and oxygen gas was introduced through the oxygen radical source. When Ar gas of 30 sccm and oxygen gas of 4 sccm were introduced into the system, the gas pressure of the deposition chamber was maintained below 1.7 mTorr and the films deposited at an incidence angle of more than 70
keywords={},
doi={10.1093/ietele/e91-c.10.1644},
ISSN={1745-1353},
month={October},}
Copier
TY - JOUR
TI - High-Rate Oblique Deposition of SiO2 Films Using Two Sputtering Sources
T2 - IEICE TRANSACTIONS on Electronics
SP - 1644
EP - 1648
AU - Yoichi HOSHI
AU - Kensuke YAGI
AU - Eisuke SUZUKI
AU - Hao LEI
AU - Akira SAKAI
PY - 2008
DO - 10.1093/ietele/e91-c.10.1644
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2008
AB - In this paper, we proposed a new high-rate oblique deposition method using two sputtering sources to obtain SiO2 films for a liquid crystal alignment layer. One sputtering source that operates in a metal mode supplies Si atoms to a substrate, and the other source that operates in an oxide mode supplies oxygen radicals to a substrate. To reduce the gas pressure of a deposition chamber and make the two sputtering sources operate in different modes, the sputtering sources were separated from the deposition chamber with stainless meshes, and Ar and oxygen gases were introduced separately through the two sputtering sources, i.e., Ar gas was introduced through the Si supply source and oxygen gas was introduced through the oxygen radical source. When Ar gas of 30 sccm and oxygen gas of 4 sccm were introduced into the system, the gas pressure of the deposition chamber was maintained below 1.7 mTorr and the films deposited at an incidence angle of more than 70
ER -