The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Deux types de phototransistors à couches minces (TFPT), le TFPT p/i/n et le TFPT n/i/n, sont caractérisés du point de vue des conditions de fonctionnement et du comportement du dispositif. On constate que le courant détecté peut être à la fois indépendant de la tension appliquée (Vapply) et dépendant linéairement de la photoéclairement dans la région de saturation du TFPT p/i/n. Cette caractéristique est due au fait que même si Vapply augmente, la couche d'appauvrissement reste dans toute la région intrinsèque et le champ électrique ne change que près de l'interface type p/intrinsèque et de l'interface intrinsèque/type n, mais reste dans la région la plus intrinsèque. Cette caractéristique est préférable pour certains types d’applications de photocapteurs. Enfin, un exemple d’application du p/i/n TFPT, rétine artificielle, est présenté.
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Mutsumi KIMURA, Yoshitaka NISHIZAKI, Takehiko YAMASHITA, Takehiro SHIMA, Tomohisa HACHIDA, "Device Characterization of Thin-Film Phototransistors for Photosensor Applications" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 10, pp. 1557-1563, October 2008, doi: 10.1093/ietele/e91-c.10.1557.
Abstract: Two types of thin-film phototransistors (TFPTs), p/i/n TFPT and n/i/n TFPT, are characterized from the viewpoint of operation condition and device behavior. It is found that the detected current can be both independent of the applied voltage (Vapply) and linearly dependent on the photo-illuminance in the saturation region of the p/i/n TFPT. This characteristic is because even if Vapply increases, the depletion layer remains in the whole intrinsic region, and the electric field changes only near the p-type/intrinsic interface and intrinsic/n-type interface but remains in the most intrinsic region. This characteristic is preferable for some kinds of photosensor applications. Finally, an application example of the p/i/n TFPT, artificial retina, is introduced.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.10.1557/_p
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@ARTICLE{e91-c_10_1557,
author={Mutsumi KIMURA, Yoshitaka NISHIZAKI, Takehiko YAMASHITA, Takehiro SHIMA, Tomohisa HACHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Device Characterization of Thin-Film Phototransistors for Photosensor Applications},
year={2008},
volume={E91-C},
number={10},
pages={1557-1563},
abstract={Two types of thin-film phototransistors (TFPTs), p/i/n TFPT and n/i/n TFPT, are characterized from the viewpoint of operation condition and device behavior. It is found that the detected current can be both independent of the applied voltage (Vapply) and linearly dependent on the photo-illuminance in the saturation region of the p/i/n TFPT. This characteristic is because even if Vapply increases, the depletion layer remains in the whole intrinsic region, and the electric field changes only near the p-type/intrinsic interface and intrinsic/n-type interface but remains in the most intrinsic region. This characteristic is preferable for some kinds of photosensor applications. Finally, an application example of the p/i/n TFPT, artificial retina, is introduced.},
keywords={},
doi={10.1093/ietele/e91-c.10.1557},
ISSN={1745-1353},
month={October},}
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TY - JOUR
TI - Device Characterization of Thin-Film Phototransistors for Photosensor Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1557
EP - 1563
AU - Mutsumi KIMURA
AU - Yoshitaka NISHIZAKI
AU - Takehiko YAMASHITA
AU - Takehiro SHIMA
AU - Tomohisa HACHIDA
PY - 2008
DO - 10.1093/ietele/e91-c.10.1557
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2008
AB - Two types of thin-film phototransistors (TFPTs), p/i/n TFPT and n/i/n TFPT, are characterized from the viewpoint of operation condition and device behavior. It is found that the detected current can be both independent of the applied voltage (Vapply) and linearly dependent on the photo-illuminance in the saturation region of the p/i/n TFPT. This characteristic is because even if Vapply increases, the depletion layer remains in the whole intrinsic region, and the electric field changes only near the p-type/intrinsic interface and intrinsic/n-type interface but remains in the most intrinsic region. This characteristic is preferable for some kinds of photosensor applications. Finally, an application example of the p/i/n TFPT, artificial retina, is introduced.
ER -