The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Une transition microruban-guide d'ondes connectée à paroi étroite utilisant un élément de patch en forme de V dans une bande d'ondes millimétriques est proposée. Étant donné que la ligne microruban sur la paroi étroite est perpendiculaire au plan E du guide d'ondes, le champ du guide d'onde ne se couple pas directement à la ligne microruban. Le courant sur l'élément de patch en forme de V circule le long des bords inclinés, puis le courant sur l'élément de patch en forme de V se couple efficacement à la ligne microruban. Trois types de transitions sont étudiés. Une étude numérique de ces transitions montre certaines relations entre bande passante et perte d'insertion. Il est confirmé que la transition améliorée présente une perte d'insertion de 0.6 dB de 76 à 77 GHz, et une bande passante de 4.1 % (3.15 GHz) pour le coefficient de réflexion inférieur à -15 dB.
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Kazuyuki SEO, Kunio SAKAKIBARA, Nobuyoshi KIKUMA, "Narrow-Wall-Connected Microstrip-to-Waveguide Transition Using V-Shaped Patch Element in Millimeter-Wave Band" in IEICE TRANSACTIONS on Communications,
vol. E93-B, no. 10, pp. 2523-2530, October 2010, doi: 10.1587/transcom.E93.B.2523.
Abstract: Narrow-wall-connected microstrip-to-waveguide transition using V-shaped patch element in millimeter-wave band is proposed. Since the microstrip line on the narrow-wall is perpendicular to the E-plane of the waveguide, waveguide field does not couple directly to the microstrip line. The current on the V-shaped patch element flows along inclined edges, then current on the V-shaped patch element couples to the microstrip line efficiently. Three types of transitions are investigated. A numerical investigation of these transitions show some relations between bandwidth and insertion loss. It is confirmed that the improved transition exhibits an insertion loss of 0.6 dB from 76 to 77 GHz, and a bandwidth of 4.1% (3.15 GHz) for the reflection coefficient below -15 dB.
URL: https://global.ieice.org/en_transactions/communications/10.1587/transcom.E93.B.2523/_p
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@ARTICLE{e93-b_10_2523,
author={Kazuyuki SEO, Kunio SAKAKIBARA, Nobuyoshi KIKUMA, },
journal={IEICE TRANSACTIONS on Communications},
title={Narrow-Wall-Connected Microstrip-to-Waveguide Transition Using V-Shaped Patch Element in Millimeter-Wave Band},
year={2010},
volume={E93-B},
number={10},
pages={2523-2530},
abstract={Narrow-wall-connected microstrip-to-waveguide transition using V-shaped patch element in millimeter-wave band is proposed. Since the microstrip line on the narrow-wall is perpendicular to the E-plane of the waveguide, waveguide field does not couple directly to the microstrip line. The current on the V-shaped patch element flows along inclined edges, then current on the V-shaped patch element couples to the microstrip line efficiently. Three types of transitions are investigated. A numerical investigation of these transitions show some relations between bandwidth and insertion loss. It is confirmed that the improved transition exhibits an insertion loss of 0.6 dB from 76 to 77 GHz, and a bandwidth of 4.1% (3.15 GHz) for the reflection coefficient below -15 dB.},
keywords={},
doi={10.1587/transcom.E93.B.2523},
ISSN={1745-1345},
month={October},}
Copier
TY - JOUR
TI - Narrow-Wall-Connected Microstrip-to-Waveguide Transition Using V-Shaped Patch Element in Millimeter-Wave Band
T2 - IEICE TRANSACTIONS on Communications
SP - 2523
EP - 2530
AU - Kazuyuki SEO
AU - Kunio SAKAKIBARA
AU - Nobuyoshi KIKUMA
PY - 2010
DO - 10.1587/transcom.E93.B.2523
JO - IEICE TRANSACTIONS on Communications
SN - 1745-1345
VL - E93-B
IS - 10
JA - IEICE TRANSACTIONS on Communications
Y1 - October 2010
AB - Narrow-wall-connected microstrip-to-waveguide transition using V-shaped patch element in millimeter-wave band is proposed. Since the microstrip line on the narrow-wall is perpendicular to the E-plane of the waveguide, waveguide field does not couple directly to the microstrip line. The current on the V-shaped patch element flows along inclined edges, then current on the V-shaped patch element couples to the microstrip line efficiently. Three types of transitions are investigated. A numerical investigation of these transitions show some relations between bandwidth and insertion loss. It is confirmed that the improved transition exhibits an insertion loss of 0.6 dB from 76 to 77 GHz, and a bandwidth of 4.1% (3.15 GHz) for the reflection coefficient below -15 dB.
ER -